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| UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. NPN SILICON TRANSISTOR 1 SOT-223 *Pb-free plating product number: PZT2222AL ORDERING INFORMATION Order Number Normal Lead Free Plating PZT2222A-AA3-R PZT2222AL-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel PZT2222AL-AA3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R207-001,B PZT2222A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 0.6 A Total Device Dissipation PC 1 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL DATA (Ta=25 , unless otherwise noted) PARAMETER Thermal resistance, junction to Ambient SYMBOL JA RATINGS 125 UNIT /W ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-Off Current Emitter Cut-Off Current Base Cut-Off Current ON CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO ICBO IEBO IBL TEST CONDITIONS IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCE=60V, VEB(OFF)=3.0V VCB=60V, IE=0 VCB=60V,IE=0, Ta=150 VEB=3.0V, IC=0 VCE=60V, VEB(OFF)=3.0V IC=0.1mA, VCE=10V IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=10mA, VCE=10V, Ta=-55 IC=150mA, VCE=10V* IC=150mA, VCE=1.0V* IC=500mA, VCE=10V* IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz IC=20mA, VCB=20V, f=31.8MHz IC=100A, VCE=10V, RS=1.0k, f=1.0kHz MIN 75 40 6 10 0.01 10 10 20 35 50 75 35 100 50 40 TYP MAX UNIT V V V nA A A nA nA DC Current Gain hFE 300 Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance VCE(SAT) VBE(SAT) fT Cobo Cibo rb'Cc NF 0.6 0.3 1.0 1.2 2.0 V V V V MHz pF pF pS dB 300 8.0 25 150 4.0 60 Re(hje) IC=20mA, VCB=20V, f=300MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R207-001,B PZT2222A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Delay time tD VCC=30V, VBE(OFF)=0.5V, Rise time tR IC=150mA, IB1=15mA Storage time tS VCC=30V, IC=150mA, Fall time tF IB1= IB2=15mA *Pulse test: Pulse Width 300s, Duty Cycle 2.0% MIN TYP MAX 10 25 225 60 UNIT ns ns ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R207-001,B PZT2222A TEST CIRCUIT 30V 200 NPN SILICON TRANSISTOR -15V 1k 6.0V 37 16V 0 220ns 30V 1.0K 0 220ns 1.0K 50 500 Fig 1. Saturated Turn-On Switching Time Fig 2. Saturated Turn-Off Switching Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R207-001,B PZT2222A TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR 500 VCE =5V DC Current Gain, hFE Collector-Emitter Voltage, VCE(SAT) (V) DC Current Gain vs. Collector Current Collector-Emitter Saturation Voltage vs. Collector Current 0.4 =10 0.3 125 0.2 25 0.1 -40 1 10 100 Collector Current, IC (mA) 500 400 300 200 100 125 25 -40 3 10 30 100 300 1 Collector Current, IC (mA) 0 0.1 0.3 Base-Emitter On Voltage, VBE(ON) (V) Base-Emitter Saturation Voltage vs. Collector Current Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter On Voltage vs. Collector Current 1 VCE =5V -40 25 0.6 125 0.4 0.2 0.1 1 =10 -40 0.8 0.8 25 0.6 125 0.4 1 500 10 100 Collector Current, I C (mA) 1 10 Collector Current, IC (mA) 25 500 Col lector Current, ICBO (nA) Collector-Cutoff Current vs. Ambient Temperature Emitter Transition and Output Capacitance vs. Reverse Bias Voltage 20 f=1MHz 100 10 1 0.1 25 50 75 100 125 150 Capacitance (pF) VCB=40V 16 12 8 4 0.1 Cob Cte Ambient Temperature, T A( ) 1 10 Reverse Bias Voltage (V) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R207-001,B PZT2222A TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR 400 320 Turn On and Turn Off Times vs. Collector Current IC I B1=IB2=10 VCC =25V Time (ns) 400 320 Switching Times vs. Collector Current IB1=I B2= VCC =25V IC 10 Time (ns) 240 160 80 t ON 0 10 100 1000 Collector Current, IC (mA) tOFF 240 160 80 tD 0 10 100 1000 Collector Current, I C (mA) tS tR tF Power Dissipation vs . Ambient Temperature 1 Power Dissipation, PC (W) 0.75 0.5 0.25 0 0 25 50 75 100 125 Temperature ( ) 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R207-001,B |
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